Hysteretic linear conductance in single electron transport through a single atom magnet
- Fernández-Rossie, J.
- Aguado, R.
- Bonilla, Luis
Publisher: Berlin; New York : Springer, 2008
ISBN: 978-3-540-71991-5, 978-3-540-71992-2
Year of publication: 2008
Pages: 460-465
Congress: ECMI conferences (14. 2006. Madrid)
Type: Conference paper
Sustainable development goals
Abstract
We consider single electron transport through a II-VI semiconductor quantum dot doped with a single Mn atom. The spin dynamics of the Mn atom is controlled by the carriers electrically injected in the dot. We find that the charge-vs.-gate curve can display hysteretic behaviour when the Mn-carrier interaction is anisotropic. We discuss the origin and implication of this result.