Hysteretic linear conductance in single electron transport through a single atom magnet

  1. Fernández-Rossie, J.
  2. Aguado, R.
Libro:
Progress in industrial mathematics at ECMI 2006
  1. Bonilla, Luis

Editorial: Berlin; New York : Springer, 2008

ISBN: 978-3-540-71991-5,  978-3-540-71992-2

Año de publicación: 2008

Páginas: 460-465

Congreso: ECMI conferences (14. 2006. Madrid)

Tipo: Aportación congreso

WoS: WOS-WOS:000252461300070 DIALNET GOOGLE SCHOLAR

Resumen

We consider single electron transport through a II-VI semiconductor quantum dot doped with a single Mn atom. The spin dynamics of the Mn atom is controlled by the carriers electrically injected in the dot. We find that the charge-vs.-gate curve can display hysteretic behaviour when the Mn-carrier interaction is anisotropic. We discuss the origin and implication of this result.

Fuente de los datos: Dialnet